科研之友
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摘要
The ultra-smooth planarization processing of single crystal sapphire is the basis for the realization of high-performance optoelectronic/micro-electronic devices, and its extremely high hardness and stability bring great challenges to the high-efficiency and high-quality planarization. A cluster magnetorheological global dynamic pressure polishing method was proposed by combining the collective constrained polishing disk of a 3-D microstructure with the reciprocating variable gap between tool and workpiece. Four types of magnetorheological polishing methods were used for comparative experimental study, and a single-factor experiment was conducted on process parameters such as the hole diameter and hole gap in the collective constrained polishing disk and variable gap frequency and amplitude of the workpiece. The results show that the flow field characteristics and the structure degree of the carbonyl iron powders in the processing area can be controlled by the collective constrained polishing disk and the reciprocating variable gap motion of the workpiece. The polishing force of the polishing pad on the workpiece surface is increased. Meanwhile, the extrusion scratch removal of abrasive particles and the stretching reflow update can be realized. Compared with traditional magnetorheological polishing, the material removal rate is increased by 154.6%, and the surface roughness is reduced by 67.1%. The average surface roughness of single crystal sapphire decreases from Ra 5.61 to Ra 0.33 nm within an area of 120 & mu;m x 96 & mu;m after 5-h polishing using the optimized process. The global dynamic pressure formed by the collective constrained polishing disk and the reciprocating variable gap of the workpiece can control the force exerted by the polishing pad on the workpiece surface and improve the polishing efficiency and surface quality.
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单位广东工业大学; 南昌航空大学
