Temporal electron-spin splitter based on a novel semiconductor magnetic quantum microstructure with zero average magnetic fields

作者：Xie, Shi-Shi; Lu, Mao-Wang^*; Huang, Xin-Hong; Wen, Li; Chen, Jia-Li

来源：Physics Letters, Section A: General, Atomic and Solid State Physics , 2023, 480: 128976.

DOI：10.1016/j.physleta.2023.128976

• Semiconductor magnetic quantum
• microstructure
• Dwell time
• Spin polarization
• Temporal electron -spin splitter

The dwell time is calculated for electron in a novel magnetic nanostructure with zero average magnetic fields, which is realized experimentally by constructing three nanosized ferromagnetic stripes on top and bottom of the InAs/AlxIn1-xAs heterostructure. Although structural magnetic fields are averagely equal to naught, the dwell time is still dependent on electron spins owing to the spin-field interaction. Due to the dependence of effective potential experienced by electron on structural parameters (such as magnetic strength and device width), spin-polarized dwell time can be conveniently modulated by reasonably fabricating ferromagnetic stripes. As a result, this novel magnetic microstructure can act as a temporal electron-spin splitter for spintronic device applications.& COPY; 2023 Elsevier B.V.

• 单位
  桂林理工大学