摘要
Aluminum nitride (AlN) ceramics are becoming cutting-edge materials for electronic information and commu-nication. However, raw AlN hydrolyzed rapidly, and the high storage costs of this material prevent widespread application. In this study, raw AlN was modified by boric acid (H3BO3) at 30 degrees C to enhance hydrolysis resistance. Transmission electron microscope (TEM), X-ray diffraction (XRD), the magic angle spinning nuclear magnetic resonance (27Al-MAS-NMR and 11B-MAS-NMR), and the fourier transform infrared spectrometer (FTIR) were used to characterize the powder before and after treatment, and the mechanism of hydrolysis resistance was determined. Modification with 0.1 M boric acid did not change the crystal phase of the AlN particles. The modified powder did not hydrolyse at 90% humidity and 70 degrees Celsius. In the presence of boric acid, a network structure of B-O-B linkages ([BOn], n = 3 or 4) formed that was connected to the AlN core via chemical bonds of B-N-Al and B-O-Al. The protective 6 - 10 nm-thick layer that formed on the surface of the AlN crystal, pre-vented attack by water molecules and hindered the hydrolysis of aluminium nitride. This study provides an alternative means of preparing anti-hydrolysis AlN powders.
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单位韩山师范学院