High-Performance Sputter-Prepared Metal-Oxide Thin-Film Transistors Based on Solution-Processed Targets

摘要

Metal-oxide (MO) thin-film transistors (TFTs) can be made using low-cost solution-processing methods, which however, generally show compromised TFT performances partially arising from the low film density. To address this challenge, here we proposed a method that employed solution-processedMO film as a target to prepare sputtered MO TFTs. For purposes of illustration, Pr doped indium gallium oxide (InGaPrO) was chosen as themain MO semiconductor material to be studied. The sputter-prepared In0.619Ga0.336Pr0.045Ox TFTs based on solution-processed film targets exhibited a saturation mobility (mu(sat)) of 10.37 +/- 0.41 cm(2)/Vs, a turn-on voltage (V-on) of -1.42 +/- 0.37 V, an I-on/I-off ratio of >1 x 10(8), and negligible hysteresis, while the conventional solution-processed counterparts displayed an inferior mu(sat) of 1.59 +/- 0.11 cm(2)/Vs. Negative bias illumination stress stability tests revealed that sputter- and solution-processed InGaPrO TFTs had negative V-on shifts of 5.4 and 1.2 V, respectively, which is mainly related to the change in film density. The proposed method was further extended to fabricate low-temperature, high-performance InOx and In0.95Pr0.05Ox TFTs with mu(sat) of 24.33 +/- 0.42 cm(2)/Vs and 21.82 +/- 0.81 cm(2)/Vs, revealing the potential of using solution-processed film targets for fabricating a wide range of sputtered MO TFTs.

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