Backside Illuminated 3-D Photosensitive Thin-Film Transistor on a Scintillating Glass Substrate for Indirect-Conversion X-Ray Detection

作者：Xu, Yangbing; Qi, Yihong; Qian, Qi; Chen, Jun; Yang, Zhongmin^*; Wang, Kai^*

来源：IEEE Electron Device Letters, 2020, 41(8): 1209-1212.

DOI：10.1109/LED.2020.3001922

• Thin film transistors
• Detectors
• X-ray detectors
• Spatial resolution
• Glass
• Substrates
• Sensitivity
• Scintillating silicate glass (SSG)
• indirect-conversion X-ray detector
• backside illumination
• active pixel sensor
• 3-D photosensitive thin-film transistor
• high sensitivity
• high resolution

A conventional large-area indirect-conversion X-ray detector usually adopts front side illumination (FSI) of a scintillator atop a photodiode-integrated thin-film transistor (TFT) array. This work however proposes a backside illuminated (BSI) three-dimensional dual-gate photosensitive a-Si:H TFT (3-D DGTFT) on a scintillating glass substrate, aiming for indirect-conversion X-ray detection. It not only improves the sensitivity with a 3-D photosensitive TFT as an active pixel sensor, but also enhances the resolution and photon utilization by reducing photon scattering and optical crosstalk. Backside illumination of 3-D photosensitive TFT-integrated scintillating glass therefore provides an alternative approach to large-area indirect-conversion X-ray imaging.

• 单位
  中山大学