Biotemplated precise assembly approach toward ultra-scaled high-performance electronics

作者：Chen, Yahong; Zhao, Mengyu; Ouyang, Yifan; Zhang, Suhui; Liu, Zhihan; Wang, Kexin; Zhang, Zhaoxuan; Liu, Yingxia; Yang, Chaoyong; Sun, Wei^*; Shen, Jie^*; Zhu, Zhi^*

来源：Nature Protocols, 2023, 18(10): 2975-2997.

DOI：10.1038/s41596-023-00870-3

• WALLED CARBON NANOTUBES
• INTEGRATED-CIRCUITS
• COMPLEMENTARY TRANSISTORS
• DNA
• SINGLE
• ARRAYS
• NANOSTRUCTURES
• DENSE

Structural DNA nanotechnology can be programmed into complex designer structures with molecular precision for directing a wide range of inorganic and biological materials. However, the use of DNA-templated approaches for the fabrication and performance requirements of ultra-scaled semiconductor electronics is limited by its assembly disorder and destructive interface composition. In this protocol, using carbon nanotubes (CNTs) as model semiconductors, we provide a stepwise process to build ultra-scaled, high-performance field-effect transistors (FETs) from micron-scale three-dimensional DNA templates. We apply the approach to assemble CNT arrays with uniform pitches scaled between 24.1 and 10.4 nm with yields of more than 95%, which exceeds the resolution limits of conventional lithography. To achieve highly clean CNT interfaces, we detail a rinsing-after-fixing step to remove residual DNA template and salt contaminations present around the contact and the channel regions, without modifying the alignment of the CNT arrays. The DNA-templated CNT FETs display both high on-state current (4-15 & mu;A per CNT) and small subthreshold swing (60-100 mV per decade), which are superior to previous examples of biotemplated electronics and match the performance metrics of high-performance, silicon-based electronics. The scalable assembly of defect-free three-dimensional DNA templates requires 1 week and the CNT arrays can be synthesized within half a day. The interface engineering requires 1-2 d, while the fabrication of high-performance FET and logic gate circuits requires 2-4 d. The structural and performance characterizations of molecular-precise DNA self-assembly and high-performance electronics requires 1-2 d. The protocol is suited for users with expertise in DNA nanotechnology and semiconductor electronics. @@@ One-pot multistage isothermal annealing assembles DNA bricks into templates to which single-stranded DNAs/carbon nanotubes are hybridized. Source and drain electrodes and Y2O3 and HfO2 for the gate dielectrics of the field-effect transistors are layered via e-beam lithography, e-beam evaporation and atomic layer deposition.Nanometer-sized DNA features fall below the resolution of conventional lithography. The resulting field-effect transistor channel pitches are smaller than typical silicon-based electronics, yet display high on-state current and small subthreshold swing. @@@ A simple and robust approach for the large-scale assembly of DNA-templated precise carbon nanotube semiconductor arrays with clean channel interfaces to build field-effect transistors for high-performance electronics.

• 单位
  厦门大学; 北京大学