MoS2 Nanoribbon Transistor for Logic Electronics

作者：Duan, Xinpei; Yang, Zhenyu; Lin, Jun; Huang, Hao; Li, Guoli; Wan, Da^*; Zou, Xuming; Bai, Jingwei; Miao, Jinshui; Liao, Lei; Liu, Xingqiang^*

来源：IEEE Transactions on Electron Devices, 2022, 69(6): 3433-3438.

DOI：10.1109/TED.2022.3164859

• Inverter
• logic gate
• MoS2 nanoribbon (NR)
• NAND gate
• transistor

Tailoring MoS2 into nanoribbon (NR) provides an efficient regulation of the electrical property. Herein, high-performance MoS2 transistors are fabricated by optimizing the channel height, width, and length. The electrical performance of the device is improved due to enhanced gate modulation capability from the quasi-3D channel geometry. The devices obtain a high ON-state current of 496 mu A . mu m(-1) while offering appropriate field-effect mobility of 52.6 cm(2)V(-1)s(-1) as the height and width of MoS2 NR are fixed to 20 +/- 3 nm and 130 +/- 10 nm, respectively. The high performance and desirable current saturation are promising to construct robust logic gates. The NOT and NAND gates are assembled based on an individual MoS2 NR. The inverters demonstrate a voltagegain of -17.8 and a total noise margin of nearly 75%. This work provides an alternative strategy to fully take the advantage of 2-D materials in logic electronics circuits.

• 单位
  中国科学院; 广西大学; 清华大学; 青岛大学