Improved performance of perovskite light-emitting diodes via bifacial modification

摘要

A bifacial modification technique has been developed to improve the device performance of the perovskite lightemitting diodes (PeLEDs). For the bottom modification, to reduce the acidity of the hole injection layer (HIL) poly(3,4-ethyl-enedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), environmental-friendly L- (+)-Arginine (Arg) is added to alleviate the erosion of indium in ITO electrode. As the result, the peak current efficiency (CE) is enhanced from 6.1 to 16.3 cd A-1, and the maximum external quantum efficiency (EQE) goes from 1.7% to 4.4%. For the top modification, (3-Aminopropyl)triethoxysilane (APTES) is introduced to passivate the surface defects of the perovskite film by coordinating with Pb2+ and suppressing the creation of metallic Pb atoms. With additional APTES on top, the peak CE reaches 31.8 cd A-1, and the maximum EQE reaches 7.7%.

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