Colossal permittivity, low dielectric loss, and good thermal stability achieved in Ta-doped BaTiO3 by B-site defect engineering

摘要

High-performance colossal permittivity (epsilon ' > 10(4)) plays an indispensable role in the development of electronic field. In this work, ultra-high dielectric permittivity (epsilon ' > 237, 294 @1 kHz) and low dielectric loss (0.012 @1 kHz) were simultaneously achieved in Ta-doped BaTi0.995Ta0.005O3 ceramics. Importantly, the dielectric permittivity changes less than 15% between - 55 and 200 degrees C, and the dielectric loss is less than 0.04. The excellent giant dielectric performance is related to the defect dipoles of electronic pins associated with electrons/oxygen vacancies/Ti3+, which are generated by B-site donor. And the thermal-activated short-range hopping of electrons is conformed to be the origin of low dielectric losses and excellent thermal stability. This work provides a strategy for achieving ultra-high dielectric permittivity, low dielectric loss, and excellent temperature stability of Ta-doped BaTiO3 simultaneously through B-site defect engineering.

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