摘要

Indium-filled InxCo4Sb12 thermoelectric bulk ingots are fabricated via microwave synthesis combined with spark plasma sintering. All major x-ray diffraction peaks are indexed to the body-centered cubic CoSb3, and secondary phases are detected in different samples. Nano-sized CoSb2, incoherent grain boundary and dislocations are observed by scanning transmission electron microscopy (STEM). The carrier concentration of InxCo4Sb12 is 4.95 x 10(19)-2.91 x 10(20) cm(-3). Minimum lattice thermal conductivity of 1.63 Wm(-1) K-1 is achieved. In0.8Co4Sb12 shows a maximum ZT of 0.90 at 673 K.

  • 单位
    贵州大学; y

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