Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

作者：Zhang, Zhaohao; Tian, Guoliang; Huo, Jiali; Zhang, Fang; Zhang, Qingzhu; Xu, Gaobo; Wu, Zhenhua; Cheng, Yan; Liu, Yan; Yin, Huaxiang^*

来源：Science China Information Sciences, 2023, 66(10): 200405.

DOI：10.1007/s11432-023-3780-7

• ferroelectric
• FeFET
• hafnium oxide
• HZO
• logic-in-memory
• neuromorphic computing

Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, recent research into hafnium oxide-based ferroelectric (FE) films and different functional devices is presented, from fundamentals to applications. Different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films, advanced hafnium oxide-based device integration, and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed.

• 单位
  中国科学院研究生院; 西安电子科技大学