摘要
The advancement of the microelectronics industry necessitates the use of interlayer insulation materials with low dielectric constants and high mechanical properties. In this paper, a new type of copolymerized fluorinated polyimide (PI) is synthesized, and mixed with polyhedral oligomeric silsesquioxane (POSS) functionalized mesoporous silica (MCM-41@POSS). The PI/MCM-41@POSS composites exhibit good hydrophobicity. With the addition of 3 wt% MCM-41@POSS, the PI composite attained an ultralow dielectric constant (k = 1.88) and low dielectric loss (0.01) at 1 MHz, which is attributed to the mesoporous structure of MCM-41 and the restriction of polarization in the bonded region. The decorated POSS effectively prevents the penetration of PI molecular chains into the mesopores of MCM-41. In addition, the PI composites containing 3 wt% of MCM-41@POSS obtain the highest maximum stress of 104.03 MPa with an elongation at break of 13.73%. The hydrophobic PI composites with ultralow-k are expected to be good candidates as interlayer materials in microelectronics devices.
-
单位北京科技大学; 广西大学