Tunable Multi-Bit Nonvolatile Memory Based on Ferroelectric Field-Effect Transistors

作者：Zhang, Qing; Xiong, Hao; Wang, Qiangfei; Xu, Liping; Deng, Menghan; Zhang, Jinzhong^*; Fuchs, Dirk; Li, Wenwu; Shang, Liyan; Li, Yawei; Hu, Zhigao; Chu, Junhao

来源：Advanced Electronic Materials, 2022, 8(5): 2101189.

DOI：10.1002/aelm.202101189

• 2D layered semiconductors
• ferroelectric films
• ferroelectric field-effect transistors
• multi-bit nonvolatile memories

Ferroelectric field-effect transistors (FeFETs) with 2D semiconductors as channel materials have been fabricated to achieve miniaturized size, high storage, and low power consumption. The FeFETs are studied based on few-layer MoS2 sheets on the non-lead Bi0.85La0.15Fe0.92Mn0.08O3 (BLFMO) ferroelectric films with a large remnant polarization (P-r approximate to 36 mu C cm(-2)). In FeFETs, the conductivity states of the 2D semiconductor can be tuned by the ferroelectric polarization. It is found that the MoS2-based FeFETs display a large memory windows exceeding 25 V, a high on/off ratio (>10(5)), remarkable program/erase ratio (approximate to 10(4)), competitive retention, endurance, and high-speed performance. Moreover, the 2D based FeFETs exhibit switchable multi-bit data storage by applying different amplitudes of negative gate voltage pulses to enhance the data storage density. On the basis of these characteristics, the 2D-FeFETs are potentially able to meet the need for scalability, capacity, retention, and endurance of nonvolatile memory.

• 单位
  复旦大学