Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors

作者：Zhong, Wei; Yao, Ruohe; Liu, Yuan^*; Lan, Linfeng; Chen, Rongsheng^*

来源：IEEE Transactions on Electron Devices, 2020, 67(8): 3157-3162.

DOI：10.1109/TED.2020.3004420

• Flexible electronics
• oxide thin-film transistor (TFT)
• self-assembled monolayer (SAM)
• stability

To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing n -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics of the developed transistors indicate that device performance can be enhanced upon OTES passivation, exhibiting high mobility (similar to 19.4 cm(2) V(-1)s(-1)), a steep subthreshold slope (similar to 90 mV/dec), near-zero threshold voltage (similar to 0.6 V), and high ON- OFF current ratio (similar to 7.9 x 10(9)). The passivation layer can effectively improve the stability of flexible ITZO TFTs even under positive bias stress (PBS) and negative bias stress (NBS), and only 0.8/1.3 V threshold voltage shifts are shown after PBS/NBS. In addition, the OTES-passivated transistors exhibit good mechanical reliability and maintain its electrical characteristics during the 10-k bending period, without drastic decline. These results demonstrate that the SAM passivation method is suitable for the fabrication of flexible high-performance metal-oxide electronic devices.

• 单位
  y; 广东工业大学