Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching

摘要

We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22 degrees undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22 degrees undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

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