Anisotropic Phonon Behavior and Phase Transition in Monolayer ReSe2 Discovered by High Pressure Raman Scattering

摘要

Re-based transition metal dichalcogenideshave attracted extensiveattention owing to their anisotropic structure and excellent propertiesin applications such as optoelectronic devices and electrocatalysis.The present study methodically investigated the evolution of specificRaman phonon mode behaviors and phase transitions in monolayer andbulk ReSe2 under high pressure. Considering the distinctiveanisotropic characteristics and the vibration vectors of Re and Seatoms exhibited by monolayer ReSe2, we perform phonon dispersioncalculations and propose a methodology utilizing pressure-dependentpolarized Raman measurements to explore the precise structural evolutionof monolayer ReSe2 under the stress fields. Varied behaviorsof the E ( g )-like and A ( g )-like modes, along with theirspecific vector transformations, have been identified in the pressurerange 0-14.59 GPa. The present study aims to offer originalperspectives on the physical evolution of Re-based transition metaldichalcogenides, elucidating their fundamental anisotropic propertiesand exploring potential applicability in diverse devices.

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