TE/TM mode full-spatial decomposition of AlGaN-based deep ultraviolet light-emitting diodes

作者：Zhang, Shuang; Wang, Shuai; Zhang, Jun^*; Long, Hanling; Gao, Yang; Dai, Jiangnan; Chen, Changqing

来源：Journal of Physics D - Applied Physics, 2020, 53(19): 195102.

DOI：10.1088/1361-6463/ab740b

• AlGaN
• deep ultraviolet light emitting diodes
• TE
• TM mode light
• sapphire sidewall roughening

The full-spatial decomposition of transverse electric (TE)/transverse magnetic (TM) mode in AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) has been experimentally investigated by introducing self-built light intensity test system mainly composed of angle resolution bracket, Glan-Taylor prism and spectrometer. Through roughening the sapphire sidewall, the extraction efficiency of DUV-LED is improved, for both TE and TM mode light with no polarization selectivity. The introduction of self-built light intensity metrology system has been reflected via scribing the sapphire sidewalls using various laser conditions, which show a reliability in the enhancement validation of the light extraction efficiency. More importantly, the self-built light intensity test system enables effective feedback on epitaxial structures and chip structure design and provides a new perspective to design high efficiency AlGaN-based DUV-LEDs.

• 单位
  华中科技大学