A 256 x 256, 50-μm Pixel Pitch OPD Image Sensor Based on an IZO TFT Backplane

作者：Xu, Yangang^*; Ruan, Chong-Peng; Zhou, Lei; Zou, Jian-Hua; Xu, Miao; Wu, Wei-Jing^*; Wang, Lei; Peng, Jun-Biao

来源：IEEE SENSORS JOURNAL, 2021, 21(18): 20824-20832.

DOI：10.1109/JSEN.2021.3095714

• Indium zinc oxide thin-film transistors
• organic photodiode
• large-area image sensor

This paper proposes an organic photodiode (OPD) image sensor based on indium zinc oxide (IZO) thinfilm transistors (TFTs). The sensor array has a 256 x 256 pixel formatwith a 50 mu mpixel size. The continuousOPD fabricated by the solution process is stacked vertically on the top of the IZO TFT backplane. A measurement system is built based on the readout IC driven by the field programmable gate array (FPGA). It is shown that the optical image can be successfully detectedby the sensor arraywith goodclarity and high quality. With a leakage current of the IZO TFT as lowas 5x10(-14) Aand a dark current of OPD as low as 10(-13) A, the total electronic noise is less than 683 e(-).