Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

作者：Xie Deng; Qiu Zhi Ren^*; Talwar Devki N; Liu Yi; Song Jen Hao; Huang Jow Lay; Mei Ting; Liu Chee Wee; Feng Zhe Chuan

来源：International Journal of Nanotechnology, 2015, 12(1-2): 97-110.

DOI：10.1504/IJNT.2015.066197

• BAlN film
• boron aluminium nitride
• co-sputtering
• dielectric function
• spectroscopic ellipsometry
• diamond substrate

Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents <= 3%, however, do not cause appreciable changes in its direct bandgaps.

• 单位
  西北工业大学; shenzhen univ