Design of220GHz power amplifier based on90nm InP HEMT process br

作者：Chen, Yan; Meng, Fan-Zhong; Fang, Yuan; Zhang, Ao^*; Gao, Jian-Jun

来源：JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 41(6): 1037-1041.

DOI：10.11972/j.issn.1001-9014.2022.06.013

• InP high electron mobility transistor?InP HEMT)
• power amplifier?PA)
• terahertz integrated circuit?TMIC)

Based on the90nm InP HEMT process?a220GHz power amplifier terahertz integrated circuit design(TMIC?is designed.The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesisof two-way five stage common-source amplifiers.The on-wafer measurement results show that the average small signalgain of the power amplifier is18dB.The power test results show that the saturated output power of the power amplifieris better than15.8mW from210GHz to230GHz?with a maximum output power of20.9mW at223GHz.The sizeof the TMIC chip is2.18mmx2.40mm