Spin Polarization by Dwell Time of Electron in a Hybrid Magnetic-Electric-Barrier Semiconductor Microstructure

摘要

We calculate dwell time spent by electron in a hybrid magnetic-electric-barrier semiconductor microstructure, which can be experimentally realized by patterning a ferromagnetic (FM) stripe and a Schottky metal (SM) stripe on top and bottom of InAs/AlxIn1-xAs heterostructure, respectively. The dwell time is closely related to electron spins due to the interaction between electron spins and structural magnetic fields, which makes possible separation of electron spins in time dimension. The spin-polarized dwell time can be controlled by rationally constructing the SM stripe, which may lead to a controllable temporal spin splitter for spintronics device applications.

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