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X9R-type SrTiO3 based ceramics with colossal dielectric permittivity and low loss derived from defect engineering and high-energy ball milling

Li, Chenlin; Huang, Chu; Meng, Yingzhi; Wang, Siyuan; Wang, Dawei; Chen, Xue; Sun, Lixian; Peng, Biaolin; Lei, Xiuyun*; Shen, Yufang*; Liu, Laijun
Science Citation Index Expanded
桂林电子科技大学; 西安电子科技大学; 西安交通大学; 桂林理工大学

摘要

The miniaturization of electronic components has become a megatrend in the future, making colossal dielectric permittivity materials receive unprecedented attention. In this work, we proposed a universal route to achieve colossal dielectric permittivity, low loss factor and excellent dielectric temperature stability in rare earth doped perovskite oxide SrTiO3. Sm doped SrTiO3 ceramics prepared by high-energy ball milling exhibit ultrahigh dielectric permittivity 441,543, low loss factor 0.02, good dielectric temperature stability (<15 %) in the temperature range of -55-200 degrees C, and very high resistance 10(9)Omega, which meets the EIA X9R standard, XPS and impedance spectra indicate that the electron-pinned defect-dipoles effect is the origin of colossal dielectric permittivity and low loss factor. This work shows that Sm-doped SrTiO3 activated by high-energy ball milling has broad prospects in the applications of thermally-stable miniaturized capacitors.

关键词

Electron-pinned defect-dipoles Colossal permittivity Low dielectric loss High breakdown field strength X9R