Metal atom doping-induced S-scheme heterojunction boosts the photoelectric response

作者：Liu, Mingwang; Wen, Jing; Qin, Ying; Li, Jinli; Tang, Yinjun; Jiao, Lei; Wu, Yu; Fang, Qie; Zheng, Lirong; Cui, Xiaowen; Gu, Wenling; Zhu, Chengzhou^*; Hu, Liuyong^*; Guo, Shaojun^*

来源：Science China Chemistry, 2023, 66(4): 1228-1236.

DOI：10.1007/s11426-022-1521-1

• metal atom doping
• built-in electric field
• heterojunction conversion
• nanozymes
• photoelectrochemical sensing

Carrier migration path and driving forces are two crucial factors for charge separation of heterojunction with efficient photoelectric response from the thermodynamic and kinetic perspectives, respectively. Constructing the S-scheme heterojunction and achieving an efficient migration path for space charge separation have aroused great interest, while a thorough insight into tuning interfacial band bending for S-scheme heterojunction is absent. Herein, we report a class of Zn atom-doped CeO2/g-C3N4 heterostructure for achieving a new carrier migration path conversion from inferior type-II to advanced S-scheme. Zn-dependent volcano-type plot for Zn-CeO2 is established to tune the Fermi level of CeO2. The built-in electric field for carrier flow dynamics strengthens when coupling with g-C3N4, which significantly boosts the photoelectric response. Based on the intrinsic enzymelike activity of Zn-CeO2, we further demonstrate that the Zn-CeO2/g-C3N4 S-scheme heterojunction can be explored for constructing a sensitive nanozymatic photoelectrochemical biosensor for the detection of acetylcholinesterase.

• 单位
  武汉工程大学; 北京大学; 中国科学院