Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet

作者：Zhang, H.; Zhu, X. Y.; Xu, Y.^*; Gawryluk, D. J.; Xie, W.; Ju, S. L.; Shi, M.; Shiroka, T.; Zhan, Q. F.; Pomjakushina, E.^*; Shang, T.^*

来源：Journal of Physics Condensed Matter, 2022, 34(3): 034005.

DOI：10.1088/1361-648X/ac3102

• magnetoresistance
• topological Hall effect
• topological spin textures

We report on systematic temperature- and magnetic field-dependent studies of the EuGa4 binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space group I4/mmm. The electronic properties of EuGa4 single crystals, with an antiferromagnetic (AFM) transition at T-N similar to 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching similar to 7x10(4) % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4 undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below T-N, in the similar to 4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.

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