Heavy-ion beam test of a monolithic silicon pixel sensor with a new 130 nm High-Resistivity CMOS process

作者：Yang, Haibo; Mai, Fatai; Liao, Jianwei; Zhang, Honglin; Ma, Xiaomeng; Gao, Chaosong; Ren, Weiping; Zhou, Wei; Sun, Xiangming; Liu, Jun; Li, Xianqin; Niu, Xiaoyang; Chen, Xurong; Zhao, Chengxin^*

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2022, 1039: 167049.

DOI：10.1016/j.nima.2022.167049

• CMOSpixelsensor
• MAPS
• Single Event Effects
• Total Ionizing Dose
• Heavy-ion beam

The Topmetal-M is a newly designed monolithic silicon pixel sensor for charged particle tracking based on a novel detector structure and implemented in a new 130 nm High-Resistivity (>1 k Omega cm) CMOS process. This sensor integrates the functionality of the Monolithic Active Pixel Sensor (MAPS) and the Topmetal sensor. It has a matrix of 512 x 400 pixels with the pitch of 40 mu m x 40 mu m. Heavy-ion campaigns with a (181)Td(35+) beam have been performed to study the performance of this Topmetal-M sensor. The test results demonstrate it has an excellent response to particle energy deposition. Furthermore,this sensor is still fully functional after exposure to similar to 14.1 krad, and no Single Event Latch-up (SEL) occurred. In addition, the baseline, the Equivalent Noise Charge (ENC), and the number of bad pixels show relatively good performance.

• 单位
  中国科学院研究生院