科研之友
微信
新浪微博
Facebook
分享链接
摘要
Silicon, as one of the most essential semiconducting materials, is widely applied in various photodetection ap-plications due to its high portability, convenient preparation, and compatibility with conventional comple-mentary metal-oxide-semiconductor technology. Nowadays, black silicon, prepared by enforcing ultrafast laser micro-structuring and hyperdoping techniques, has received considerable attention for developing next-generation silicon photonics and silicon optoelectronics devices. In this work, high-comprehensive-property black silicon photodetectors with broadband spectral responsivity and high gain were achieved by femto-second laser irradiation and titanium hyperdoping. The proposed device can respond to the incident light from 400 nm to at least 1550 nm, demonstrating a high responsivity of 40.59 A/W for 950 nm under the application of-5 V bias, and the corresponding detectivity can reach 3.61 x 1012 cm & sdot;Hz1/2W-1. Moreover, the fabricated photodetector exhibits a stable sub-bandgap photocurrent at 1550 nm, with an average responsivity of 3.42 mA/ W by applying a-5 V bias. These improvements were achieved by the hyperdoping of titanium in silicon, which shows deep impurity levels, low electroactivity, and increased effective carrier lifetimes, as well as the formation of shallow n-i heterojunction and trapping centers induced by the femtosecond laser irradiation. Our work provides significant insights into the applications of black silicon in various optical-related fields, including weak and infrared photon detection, silicon photonic chips, remote sensing, and large-scale optoelectronic integration.
-
单位南开大学
