Negative photoconductivity in sulfur-hyperdoped silicon film

Authors：Zhang, Yanbin; Li, Xiaohong^*; Lin, Xiaoming; Li, Guoqiang^*; Cai, Yong; Wen, Cai; Wang, Kai; Liu, Dexiong; Hu, Sifu; Hu, Yanlei

Source：Materials Science in Semiconductor Processing, 2019, 98: 106-112.

DOI：10.1016/j.mssp.2019.04.002

• Sulfur hyperdoping
• Silicon
• Negative photoconductivity
• Photo-electricity
• Semiconductors

We report a negative photoconductivity effect in sulfur-hyperdoped silicon film under near-ultraviolet light illumination. A weak incident ultraviolet light can cause a significant increase in the sheet resistance of the film, and the most sensitive sample observed has the maximum increment of 817%. In addition, the amplitude of this negative photoconductivity decreases with the time of thermal annealing treatment. The negative photoconductivity of sulfur-hyperdoped silicon film is related to light-induced defects which act as recombination center in the bandgap.

• Institution
  西南科技大学; 中国科学技术大学; 中国科学院; 电子科技大学