Influence of Ⅰ layer thickness on thermal damage process of PIN limiter

作者：Zhang Yongzhan; Meng Fanbao; Zhao Gang

来源：强激光与粒子束, 2017, 29(9).

DOI：10.11884/HPLPB201729.170087

• thickness of Ⅰ layer
• PIN limiter
• simulation of device
• thermal damage
• microwave pulse

Based on the device physics simulation, we studied the microwave pulse thermal process of the PIN limiter diode, and the device''s 2D multi-physical field model was established with software Sentaurus-TCAD.The peak temperature change of different thickness of Ⅰ layer was analyzed under injections of 5.3,7.5 and 9.4 GHz microwave signals.Simulation results show that the influence of Ⅰ layer thickness on thermal process of PIN diode divides into two stages, before the "turning point", the peak temperature changes with the increasing of Ⅰ layer thickness, after the point the peak temperature decreases with the increasing of Ⅰ layer thickness.The influence of microwave pulse frequency on the "turning point" is not obvious.

• 单位
  中国工程物理研究院; 北京