Bottom-Up Growth of n-Type Polymer Monolayers for High-Performance Complementary Integrated Circuits

作者：Guo, Yifu; Yang, Mingqun; Deng, Junyang; Ding, Chenming; Duan, Chunhui^*; Li, Mengmeng^*; Li, Ling; Liu, Ming

来源：Advanced Electronic Materials, 2023, 9(5).

DOI：10.1002/aelm.202201307

• complementary integrated circuits
• conjugated polymers
• monolayer transistors
• polymer aggregation

Downscaling the semiconductor into ultrathin film is of vital importance to high-performance field-effect transistors (FETs), but the high-mobility FETs based on conjugated polymer monolayers have been rarely realized. Especially, the lack of high-performance n-type polymer monolayer FETs hinders the development of complementary integrated circuits. Herein, by fine-tuning the supramolecular assembly of two thiazole flanked naphthalene diimide-based conjugated polymers, the approximate to 2.5 nm-thick monolayers with well-defined fibrillar morphology are grown in a controllable way, where the one-dimensional solution-state structures are inherited. The resultant monolayer FETs show the electron mobility up to 0.25 cm(2) V-1 s(-1), among the record for n-type polymer monolayer FETs. More importantly, the first demonstration of polymer monolayer complementary integrated circuits is present, and a record-high inverter gain of 113 is achieved, which is also identical to the best polymer thin-film inverters.

• 单位
  中国科学院; 中国科学院研究生院