摘要
X-ray nanodiffraction was used to measure the thermal stress of 10 mu m nanotwinned Cu bumps in Cu/SiO2 hybrid structures at 55 degrees C, 27 degrees C, 100 ffi degrees C, 150 degrees C, and 200 degrees C. Bonding can be achieved without externally applied compression. The X-ray beam size is about 100 nm in diameter. The Cu bump is dominated by (111) oriented nano-twins. Before the hybrid bonding, the thermal stress in Cu bumps is compressive and remains compressive after bonding. The average stress in the bonded Cu joint at 200 degrees C is as large as 169.1 MPa. In addition, using the strain data measured at various temperatures, one can calculate the effective thermal expansion coefficient (CTE) for the 10 mu m Cu bumps confined by the SiO2 dielectrics. This study reports a useful approach on measuring the strain and stress in oriented metal bumps confined by SiO2 dielectrics. The results also provide a deeper understanding on the mechanism of hybrid bonding without externally applied compression.