摘要

The SiO2 layer preferentially generated on the surface of silicon carbide abrasives in Polishing Porcelain stoneware tile Residues (PPR) is corroded by silicate liquid during firing, resulting in continuous oxidation and foaming of silicon carbide, which makes the PPR difficult to be reused. The PPR is fired to form a silicate liquid that wraps micron silicon carbide in it. In this work, it is possible to study the corrosion of silicate to silicon carbide at high temperature by using two (Ceramic-SiC) and three (Ceramic-SiO2-SiC) layer structure model to simulate the corrosion of silicate to silicon carbide. The corrosion mechanism of SiC in PPR by silicate liquid during firing is revealed that the corrosion rate at its two sides (interfaces) determines the ultimate change in the thickness of the corrosion layer between the ceramic and the SiO2 layer. Importantly, the corrosion layer thickness with time on the silicate-SiO2 cross-section periodically presents wave-like changes, which can be attributed to the ionic migration between layers and the rate at which cations cross the corrosion layer when studying the three-layer model.