Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE

作者：Zhao, Yang; Wang, Hui; Zhuang, Shiwei; Wu, Guoguang^*; Leng, Jiyan^*; Li, Wancheng; Gao, Fubin; Zhang, Baolin; Du, Guotong

来源：Optics Communications, 2016, 371: 128-131.

DOI：10.1016/j.optcom.2016.03.045

• Indium nitride
• Nickel oxide
• PAMBE
• Light-emitting diodes

The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of similar to 1.5 V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565 nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction.

• 单位
  河南大学; 吉林大学