High-Performance Polycrystalline Silicon Thin-Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged-Grain Lines

作者：Zhang, Meng; Lin, Haotao; Deng, Sunbin; Chen, Rongsheng; Li, Guijun; Han, Su-Ting; Zhou, Ye; Yan, Yan^*; Zhou, Wei^*; Wong, Man; Kwok, Hoi-Sing

来源：Advanced Electronic Materials, 2020, 6(2): 1900961.

DOI：10.1002/aelm.201900961

• anisotropic conductivity
• bridged grains
• polycrystalline silicon
• thin-film transistors

By utilizing anisotropic conductivity of bridged-grain (BG) lines, a polycrystalline silicon (poly-Si) thin-film transistor (TFT) without source/drain (S/D) doping is designed, simulated, and fabricated. In the new design, the current is made to flow along the BG lines in the S/D region and flow perpendicularly to the BG lines in the channel. By taking advantage of the anisotropic conductivity of the BG lines, the S/D doping process is eliminated and the fabrication process cost is reduced. Meanwhile, the advantages of adopting BG lines are maintained. The as-fabricated TFTs without S/D doping exhibit excellent device characteristics, compared with normal TFTs. The reliability of TFTs without S/D doping is also evaluated under hot carrier stress and negative/positive bias stress. Additionally, the proposed new TFT structure allows a wider range of dopant activation conditions.

• 单位
  y