A novel Cs 4 PW 11 O 39 Fe/Si composite material to achieve high photoelectric performance

Authors：Lina Li; Jian Ma; Hang Ma; Xilong Liu; Leiyun Han; Xiaoshan Li; Xiaoyang Liu; Chongtai Wang; Yingjie Hua

Source：Optical Materials, 2020, 105: 109896.

DOI：10.1016/j.optmat.2020.109896

• Solar cell
• Semiconductor material
• Photoelectric material
• P-n Junction
• Photoelectric conversion efficiency

Here we report a novel composite material Cs 4 PW 11 O 39 Fe/Si(Cs 4 PW 11 Fe/Si), which was prepared by combination of chemical etching and hydrothermal method. This composite material displays a superior photoelectric performance. A transient photocurrent density of 0.4 mA cm ?2 and a maximum surface photovoltage of 0.043 mV as well as an maximum IPCE of 80.8% were obtained, much higher than those of the pristine p-Si or Cs 4 PW 11 Fe. The solar cell device ITO/Cs 4 PW 11 Fe/p-Si/Ag presents a PCE of 1.36% with a V oc of 0.78 V and a J sc of 1.27 mA cm ?2 as well as a FF of 68.5%. The improvement of the photoelectric performance results from the “mastoid” structure on the surface of material and the formation of p-n heterojunction between n-Cs 4 PW 11 Fe and p-Si. The “mastoid” structure and p-n junction are favorable to increasing light absorption and facilitating photo-generated carriers’s separation and transfer.

• Institution
  海南师范大学