Comprehensive characterization of InAs/GaSb LWIR superlattices with varying InAs layer thickness by molecular beam epitaxy

摘要

Type-II superlattice (T2SL) detectors represent a promising advancement in long-wavelength infrared (LWIR) photodetector with significant potential across various applications. This study aims to explore the effect of different InAs layer thicknesses on the properties of InAs/GaSb LWIR SLs, which are fabricated by molecular beam epitaxy (MBE). By employing a comprehensive multi-technique analysis, including Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM), Energy-Dispersive X-ray Spectroscopy (EDXS), X-ray Photoelectron Spectroscopy (XPS), and Photoluminescence (PL). We substantiate the outstanding surface morphology, high-quality strain-balanced characterization, actual growth thickness assess-ment, and elemental content analysis using advanced spectroscopy techniques. These results demonstrate comprehensive insights into the 14/7 ML InAs/GaSb SLs elemental composition and distribution, enhancing understanding of superlattice properties for LWIR applications.

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