Nonvolatile bistable memory device based on polyfluorene with Ag NPs doping materials

作者：Huang, Jiahe; Zhang, Hongyan; Zhao, Xiaofeng; Bai, Ju; Hou, Yanjun; Wang, Shuhong^*; Wang, Cheng^*; Ma, Dongge

来源：Organic Electronics: physics, materials, applications , 2020, 78: 105549.

DOI：10.1016/j.orgel.2019.105549

• PF-MeOTPA
• Ag NPs
• Flash memory device
• Nonvolatile behavior

Organic electric memory devices have broad application prospects. In the present paper, a new kind of polyfluorene-based material containing methoxytriphenylamine groups was synthesized, which exhibited good Flash-type storage characteristics. The material was further doped with Ag NPs to improve storage performance. With appropriate amount of Ag NPs, the device presented an ON/OFF current ratio up to 1.1 x 10(4) with excellent stability. In addition, the switching characteristics of the device were discussed through data fitting and molecular orbital calculation.