Nanofiber Architecture Engineering Implemented by Electrophoretic-Induced Self-Assembly Deposition Technology for Flash-Type Memristors

作者：Zhang, Cheng^*; Li, Yang^*; Li, Zhuang; Jiang, Yucheng; Zhang, Jinlei; Zhao, Run; Zou, Jingyun; Wang, Yanan; Wang, Kuaibing; Ma, Chunlan^*; Zhang, Qichun^*

来源：ACS applied materials & interfaces, 2022, 14(2): 3111-3120.

DOI：10.1021/acsami.1c22094

• nanofiber
• electrophoretic deposition (EPD)
• electrophoretic-induced self-assembly deposition (EPAD)
• WORM
• flash
• memristor

Electrophoretic deposition (EPD) has been recognized as a promising large-scale film preparation technology for industrial application. Inspired by the conventional EPD method and the crystal diffusion growth strategy, we propose a modified electrophoretic-induced self-assembly deposition (EPAD) technique to control the morphologies of organic functional materials. Here, an ionic-type dye with a conjugated skeleton and strong noncovalent interactions, celestine blue (CB), is chosen as a module molecule for EPAD investigation. As expected, CB molecules can assemble into different nanostructures, dominated by applied voltage, concentration effect, and duration. Compared to a nanopillar layered packing structure formed by the traditional spin-coating method, the EPAD approach can produce a nanofiber structure under a fixed condition of 10 V/10 min. Intriguingly, a memristor device based on a pillar-like nanostructure exhibits WORM-type behavior, while a device based on nanofibers presents Flash memory performance. The assemble process and the memory mechanism are uncovered by molecular dynamics simulations and density-functional theory (DFT) calculations. This work endows the typical EPD technique with a fresh application scenario, where an in-depth study on the growth mechanism of nanofibers and the positive effect of unique morphologies on memristor performance are offered.

• 单位
  苏州大学; 常州大学; 南京农业大学; y