Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors

作者：He, Penghui; Hong, Ruohao; Li, Guoli; Zou, Xuming; Hu, Wei; Lan, Linfeng^*; Iniguez, Benjamin; Liao, Lei^*; Liu, Xingqiang^*

来源：IEEE Electron Device Letters, 2022, 43(11): 1894-1897.

DOI：10.1109/LED.2022.3204831

• Oxide TFTs
• relative humidity
• aqueous solution
• stability

Aqueous route is readily for fabricating oxide thin-film transistors (TFTs), but the relative humidity (RH) impacts evolution of oxide thin films. Herein, the effect of RH on the electronic performance and bias stability of aqueous-processed Tb-doped indium oxide (Tb:In2O3) TFTs is investigated. The mobility is sensitive to RH. By tuning the RH for desirable thickness and density of the obtained Tb:In2O3 films, the TFTs present optimized mobility of 13.0 cm(2)/Vs, with high ON/OFF ratio of 10(8). Notably, low threshold voltage shift of -0.35 V and 0.42 V under negative and positive gate bias stress are simultaneously obtained with a fabricating RH of 40%. Moreover, dry ambience (RH <= 23%) affords to abundant nanopores and defects, resulting in inferior performance and stability of the aqueous-processed oxide TFTs. And high humid ambience easily ruins the uniform of precursor films. This work indicates the strategy to fabricate highly stable oxide TFTs with high performance.