A quasi-2D perovskite antireflection coating to boost the performance of multilayered PdTe2/Ge heterostructure-based near-infrared photodetectors

作者：Chen, Huahan; Xie, Chao^*; Zhong, Xianpeng; Liang, Yi; Yang, Wenhua; Wu, Chunyan; Luo, Linbao^*

来源：Journal of Materials Chemistry C, 2022, 10(15): 6025-6035.

DOI：10.1039/d2tc00438k

• SCHOTTKY JUNCTION
• GRAPHENE
• HETEROJUNCTIONS
• FABRICATION

A hybrid heterostructure composed of two-dimensional (2D) material/narrow bandgap semiconductor represents a promising platform for designing highly efficient and cost-effective near-infrared (NIR) photodetectors. However, performance enhancement is usually restricted by reduced light usage due to relatively high refractive indexes and low absorption coefficients of the hybrid heterostructures. Herein, we demonstrate that a quasi-2D perovskite thin film can serve well as an antireflection coating to greatly boost the performance of a multilayered PdTe2/Ge heterostructure-based NIR photodetector. Specifically, upon the perovskite coating with an optimized thickness, photoresponsivity and specific detectivity can be improved significantly from similar to 526.4 mA W-1 to similar to 976.2 mA W-1 and from similar to 2.43 x 10(11) Jones to similar to 4.78 x 10(11) Jones, respectively, under a 1550 nm optical communication wavelength with a light intensity of similar to 70 mu W cm(-2) at zero bias. Meanwhile, other important performance parameters including dark current and response speed can maintain almost identical. Moreover, owing to the improved moisture resistance of the upper quasi-2D perovskite layer, the photodetector exhibits excellent device stability and operational durability under atmospheric conditions. The results not only provide a convenient route for improving the performance of NIR optoelectronic devices but also broaden the application scope of perovskite materials.