Enhancement of thermoelectric performance in TiNiSbxSn1-x half-Heusler alloys

Authors：Gao, Feng; Lei, Ying^*; Li, Yu^*; Qiu, Jin; Yong, Chao; Wang, Nan; Song, Guangyuan; Hu, Huaichuan

Source：Journal of Solid State Chemistry, 2023, 323: 124060.

DOI：10.1016/j.jssc.2023.124060

• TiNiSn-based half-Heusler
• Microwave synthesis
• Annealing
• Sb doping
• Power factor

In this paper, TiNiSn1-xSbx thermoelectric bulks were fabricated by microwave synthesis combined with spark plasma sintering and annealing process. The high density of the samples were confirmed by the physical phase analysis and microstructure characterization of the samples. Through the analysis of the thermoelectric properties of the samples, it was determined that the antimony doping and the annealing process resulted in a sig-nificant improvement in the electrical properties of the TiNiSn-based materials, and allowed the samples to maintain relatively low lattice thermal conductivity. At the same time, the lattice thermal conductivity of all samples is less than 1.7 W m(-1)K(-1) at high temperature. TiNiSn0.965Sb0.035 obtained a maximum power factor of 3125.9 mu Wm(-1)K(-2) at 873 K and a total thermal conductivity of 4.2-4.7 W m(-1)K(-1), with the maximum ZT value of 0.57, which is similar to 86% higher than that of the undoped sample.

• Institution
  贵州大学; y