Asymmetric atomic diffusion and phase growth at the Al/Ni and Ni/Al interfaces in the Al-Ni multilayers obtained by magnetron deposition

摘要

The interface morphology and interdiffusion of the Al-Ni multilayers were studied by transmission electron microscopy (TEM) and atom probe tomography (APT). Asymmetric atomic diffusion and phase growth at the interfaces formed by Al atoms deposited on solid Ni (Al/Ni) and Ni deposited on Al (Ni/Al) were observed. Due to the blocking effect of interface, Ni diffused only into the upper Al layer after annealing at 573 K for 3 h leading to slow reaction rate. APT analysis further reveals that Al could diffuse across the Ni/Al interface into the inner Ni layers and distribute heterogeneously. Some Al atoms diffused into the particle and located on the same crystal plane with Ni, which helps to interpret spontaneous and rapid phase transformation of this nanostructured reactive multilayer.

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