Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

作者：Jiang, Lilai; Song, Chengzhen; Wu, Yu-Ning^*; Chen, Shiyou^*

来源：AIP Advances, 2023, 13(4): 045008.

DOI：10.1063/5.0150381

• DEPOSITED AL2O3
• GAN
• DEFECTS
• HEMTS

In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal-oxide-semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal-insulator-semiconductor high electron mobility transistor (MISHEMT), were studied to investigate the degradation mechanism after proton irradiation. The vacancies produced by proton irradiation, especially Ga vacancy (V-Ga), are found to be responsible for the device degradation by carrier removal and mobility degradation, which directly influence the saturation drain current and maximum transconductance of AlGaN/GaN-based devices. Furthermore, AlGaN/GaN HEMTs with gate dielectrics (Al2O3, SiNx) exhibit better irradiation resistance than traditional AlGaN/GaN HEMTs, which produce fewer vacancies at the channel after proton irradiation. Al2O3 MOSHEMTs also show better performance than SiNx MISHEMTs in resisting proton damage. Therefore, a high-quality dielectric layer is a key factor to improve the reliability of AlGaN/GaN-based devices after proton irradiation.

• 单位
  复旦大学