摘要
The greatest challenge that limits the application of piezo-photocatalytic materials is the low separation effi-ciency of the generated electron-hole pairs, resulting in poor catalytic activity. Here, the semiconductor n-p heterojunctions BiVO4/BiFeO3 (BVO/BFO) were designed to enhance its piezo-photocatalytic processes. Under the excitation of piezo-vibration and the irradiation of visible light, the BVO/BFO heterojunctions exhibited ultra-high and stable piezo-photocatalytic performance with the degradation rate of Rhodamine B (RhB) solution up to 98 %, and its k value was 6.12 times than that of photocatalysis and 4.36 times than that of piezoelectric catalysis. Thanks to the n-type BVO nanoparticles with good crystallinity were uniformly distributed on the surface of the p-type piezoelectric material BFO, the built-in polarization field was formed and be advantageous to improve the carrier transport performances. A large electron diffusion coefficient (27.44 x 103 cm(2).s(-1)), effective diffusion length (14.49 cm), and long electron lifetime (7.66 x 10(-3) s) were achieved in the BVO/BFO heterojunctions, which played important roles to boost the piezo-photocatalytic activity. The preparation of BVO/BFO heterojunctions and their remarkable photo-piezoelectric properties provides a theoretical and prac-tical reference for the development of efficient piezo-photocatalysis to apply in environmental remediation.
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单位南昌大学; 南昌航空大学