Nitrogen doping in the surface layers of Ti3C2Tx/rGO film via nitrogen ion implantation for supercapacitor

作者：Yang, Qingqing; Wang, Wei; Li, Xingnian; Li, Qiang^*; Xun, Mengyuan; Meng, Li; Tang, Qiong; Xu, Jun^*

来源：JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2023, 27(8): 1955-1967.

DOI：10.1007/s10008-023-05488-9

• Ion implantation
• Ti3AlC2
• Multilayer Ti3C2Tx
• rGO
• Supercapacitor

Two-dimensional transition metal carbides (MXenes) are widely used in the field of electrochemical energy storage due to their unique properties, but the efficient use of multilayer MXenes (m-MXenes) to prepare flexible electrodes remains a challenge. Herein, large-size graphene oxide (GO) is used as a conductive adhesive to bridge the multilayer Ti3C2Tx (m-Ti3C2Tx) to form a Ti-O-C bond to form the flexible Ti3C2Tx/GO (MG) film which was subsequently implanted by nitrogen ions to dope nitrogen in its surface layers (N-Ti3C2Tx/GO, NMG). The NMG was annealed at 400 celcius to obtain the N-Ti3C2Tx/reduced GO (N-Ti3C2Tx/rGO, NMRG) electrode for supercapacitor. Compared with the Ti3C2Tx/rGO (MRG), the specific capacitance of NMRG-1 (nitrogen ion implantation dose is 1 x 10(17)) reaches 115 F g(-1) (248. 7 F cm(-3)) at 0.2A g(-1), while it is 95 F g(-1) (167.8 F cm(-3)) of MRG. The rate performance of NMRG-1 is increased from 31.5 (MRG) to 76.1%. In addition, NMRG-1 electrode can maintain 73% capacitance retention and 85% Coulomb efficiency after 10,000 cycles at 2A g(-1). And it exhibits energy density of 8.6 Wh L-1 at power density of 122.4W L-1. The results show that ion implantation provides a selective method for nitrogen doping in multilayer MXene, making it more competitive in practical applications.