Influence of Si doping on the structural and optical properties of InGaN epilayers

作者：Lu Ping Yuan; Ma Zi Guang; Su Shi Chen; Zhang Li; Chen Hong^*; Jia Hai Qiang; Jiang Yang; Qian Wei Ning; Wang Geng; Lu Tai Ping; He Miao

来源：Chinese Physics B, 2013, 22(10): 106803.

DOI：10.1088/1674-1056/22/10/106803

• Si doping
• InGaN
• V-shaped defect

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

• 单位
  中国科学院