摘要
Artificial synapses are the key hardware to realize high-efficiency and energy-saving bionic neuromorphic systems. Two-terminal synaptic devices have attracted intense interests due to their simple structure, but they are facing challenges of reducing the energy consumption and improving retention performance. In this work, a two-terminal synaptic device with a structure of Al/PVDF-TrFE/PEDOT:PSS/ITO is fabricated. As the electrostatic field originating from remnant polarization of PVDF-TrFE greatly stabilizes the postsynaptic conductance, the device successfully emulates important synaptic functions of biological synapses. This work provides a simple strategy by introducing ferroelectrics to design two-terminal synaptic devices with high stability and plasticity.