Valley-Dependent Electronic Transport in a Graphene-Based Magnetic-Strained Superlattice

摘要

As the rapid development of valleytronics and its huge-potential applications in valleytronic devices, to well understand the valley-dependent transport mechanism of electrons in graphene is a very urgent work. Thus, in this paper, we use transfer matrix method to investigate the valley-dependent electron transport in a magnetic-strained superlattice. We analyze the dependence of the electron transmission and the conductance as well as the valley polarization on the periodic number of the magnetic-strained barriers. Through careful analysis of numerical results, we find that the periodic number of the magnetic-strained barriers plays an important role in the electron transmission, and so strongly affects the conductance and the valley polarization. This provides theoretical guidance for controlling the valley-dependent transport properties of electrons.

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