摘要
Doping in luminescent metal halides has become an effective strategy for tailoring the optoelectronic properties. Herein, Cu+ is introduced into Rb2AgBr3 to design the synthesis of Rb2AgBr3:xCu(+), which possess cold-white light emission at room-temperature without changing the spectral profiles; however, the Cu+ incorporation significantly enhances the photoluminescence quantum efficiency to 98.8% in Rb2AgBr3:0.05Cu(+). Additionally, a high scintillation light yield of up to 79 250 photons MeV-1 and a low detection limit of 714.83 nGy s(-1) have been achieved via this Cu+ doping engineering. X-ray imaging with a spatial resolution of up to 5.8 lp mm(-1) is further realized using a large scintillator film prepared by mixing polydimethylsiloxane with Cu+ doped Rb2AgBr3 scintillators. This study provides a Cu+ doping design principle for improving both the photoluminescence and scintillation performances of metal halides.