Bimetallic Alloys b-AsXP1-X at High Concentration Differences: Ideal for Photonic Devices

作者：Liu, Fangqi; Yu, Qiang; Xue, Junfei; Shu, Bowang; Zheng, Cangdong; Deng, Haiqin; Zhang, Xiaolin; Gong, Pengwei; Chen, Mingyan; Lin, Hai; Zhu, Sicong^*; Wang, Jian^*; Wu, Jian^*

来源：Journal of Physical Chemistry Letters, 2022, 13(40): 9501-9509.

DOI：10.1021/acs.jpclett.2c01973

• BLACK ARSENIC-PHOSPHORUS
• ELECTRONIC-STRUCTURE
• CARRIER MOBILITY
• MONOLAYER
• GENERATION
• BANDGAP

Black arsenic phosphorus (b-AsxP1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsxP1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. AsxP1-x at x <= 0.25 is capable of broadband absorption, while b-AsxP1-x at x >= 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-AsxP1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x >= 0.75, but a typical circuit system signal at x <= 0.25. These results suggest that b-AsxP1-x with high concentration differences is a perfect candidate for photonic material.

• 单位
  复旦大学; 中国科学院