Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature

摘要

Hafnia ferroelectric-based Fe-FET devices have attracted increasing interest due to their CMOS compatibility, high scalability and low power consumption. Ge-based Fe-FETs could help overcome the shortcomings of Si-based Fe-FETs caused by the interface layer. In this work, the effect of the deposition temperature on the TiN/Hf0.5Zr0.5O2/Ge device performance is systematically studied, which is helpful for finding the optimal conditions for Ge-based Fe-FETs. By adjusting the deposition temperature, the endurance property of the MFS capacitor is successfully enhanced to 2x10(5) cycles with a large minimum remnant polarization (2P(r) approximate 46 mu C/cm(2)). The observed phenomenon could be well understood by the effects of the deposition temperature and impurity concentration on the grain size.

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